STGFW30V60DF Description
STGFW30V60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high-frequency converters. A safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. The STGFW30V60DF IGBT is embedded in the TO-247 package for the purpose of saving board space.
STGFW30V60DF Features
Advanced proprietary trench gate field-stop structure
PositiveVCE(sat) temperature coefficient
Very tight parameter distribution
Package: TO-3PF
Low thermal resistance
STGFW30V60DF Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
