IRGP30B120KD-EP Description
IRGP30B120KD-EP is a 1200v Insulated gate bipolar transistor with an Ultrafast soft recovery diode. The Infineon IRGP30B120KD-EP can be applied in Automotive, Advanced driver assistance systems (ADAS), Enterprise systems, Enterprise projectors, Personal electronics, and Home theater & entertainment applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP30B120KD-EP is in the TO-247AD package with 38W power dissipation.
IRGP30B120KD-EP Features
Low VcE(on) Non-Punch Through (NPT) Technology
Low Diode VF (1.76V Typical @ 25A & 25°C)
10 μs Short Circuit Capability
Square RBSOA
Ultrasoft Diode Recovery Characteristics
Positive Vce(on) Temperature Coefficient
Extended Lead TO-247AD Package
Lead-Free
IRGP30B120KD-EP Applications
Automotive
Advanced driver assistance systems (ADAS)
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
