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IKW75N60TAFKSA1

IKW75N60TAFKSA1

IKW75N60TAFKSA1

Infineon Technologies

IKW75N60TAFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW75N60TAFKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2014
Series TrenchStop®
Pbfree Code yes
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 428W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 121ns
Current - Collector (Ic) (Max) 80A
Turn On Time69 ns
Test Condition 400V, 75A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Turn Off Time-Nom (toff) 401 ns
IGBT Type Trench Field Stop
Gate Charge470nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 33ns/330ns
Switching Energy 4.5mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3305 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.059491$1.059491
10$0.999520$9.9952
100$0.942943$94.2943
500$0.889569$444.7845
1000$0.839216$839.216

IKW75N60TAFKSA1 Product Details

IKW75N60TAFKSA1 Description


The IKW75N60TAFKSA1 is an IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode.



IKW75N60TAFKSA1 Features


  • Very low VCE(sat) 1.5V (Typ.)

  • Maximum Junction Temperature 175°C

  • Short circuit withstand time 5μs

  • Positive temperature coefficient in VCE(sat)

  • very tight parameter distribution

  • high ruggedness, temperature-stable behaviour

  • very high switching speed

  • Low EMI

  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode

  • Qualified according to JEDEC1) for target applications

  • Pb-free lead plating; RoHS compliant



IKW75N60TAFKSA1 Applications


  • Frequency Converters

  • Uninterrupted Power Supply


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