IRG4BC20K-S Description
IRG4BC20K-S is a 600V insulated gate bipolar transistor. As a Freewheeling Diode, we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT. The latest generation 4 IGBTs offer the highest power density motor controls possible. The Operating and Storage Temperature Range is between -55 and 150℃. And the Switch IRG4BC20K-S is in the TO-220A package with 60W power dissipation.
IRG4BC20K-S Features
High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V
Combines low conduction losses with a high switching speed
The latest generation design provides tighter parameter distribution and higher efficiency than the previous generation
Continuous Collector Current: 16A
Short Circuit Withstand Time: 10μs
Gate-to-Emitter Voltage: ±20V
IRG4BC20K-S Applications
Automotive
Advanced driver assistance systems (ADAS)
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
