IRG4PC50UD-EPBF Description
IRG4PC50UD-EPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. Generation 4 IGBTs offer the highest efficiencies available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing. IRG4PC50UD-EPBF is designed as a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs.
IRG4PC50UD-EPBF Features
Voltage - Collector Emitter Breakdown (Max): 600 V
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Vce(on) (Max) @ Vge, Ic: 2 V
Power - Max:200 W
Switching Energy: 0.99 mJ (on), 0.59 mJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 46 ns/140 ns
Operating Temperature: -55°C to 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC (TO-247-3)
IRG4PC50UD-EPBF Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Datacom module
Enterprise systems
Enterprise projectors
