Name: IRGR3B60KD2TRP
Brand: Infineon Technologies
SKU: IRGR3B60KD2TRP
Availability: InStock

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IRGR3B60KD2TRP

Manufacturer part number:IRGR3B60KD2TRP

Manufacturer:Infineon Technologies

Description:IRGR3B60KD2TRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGR3B60KD2TRP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	52W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRGR3B60KD2PBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	22ns
Element Configuration	Single
Power Dissipation	52W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	7.8A
Reverse Recovery Time	77 ns
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Max Breakdown Voltage	600V
Turn On Time	35 ns
Test Condition	400V, 3A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Turn Off Time-Nom (toff)	211 ns
IGBT Type	NPT
Gate Charge	13nC
Current - Collector Pulsed (Icm)	15.6A
Td (on/off) @ 25°C	18ns/110ns
Switching Energy	62μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	105ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRGR3B60KD2TRP Product Details

IRGR3B60KD2TRP Description

IRGR3B60KD2TRP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 10μs short circuit SOA, it is able to increase the margin for the short circuit protection scheme. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides rugged transient performance based on square RBSOA and high ILM- rating.