IRG4BC20UDSTRLP Description
IRG4BC20UDSTRLP is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRG4BC20UDSTRLP can be applied in many applications, such as Automotive, Advanced driver assistance systems (ADAS), Industrial, Grid infrastructure, Enterprise systems, and Enterprise machines. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC20UDSTRLP is in the D2Pak package with 60W power dissipation.
IRG4BC20UDSTRLP Features
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard D2Pak package
Lead-Free
IRG4BC20UDSTRLP Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Grid infrastructure
Enterprise systems
Enterprise machine