STGWA25H120DF2 Description
The STGWA25H120DF2 IGBT was created employing a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the H series of IGBTs, which stands for the best conduction and switching loss compromise for high-switching frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce a safer paralleling operation.
STGWA25H120DF2 Features
Safe paralleling
Minimized tail current
Low thermal resistance
High-speed switching series
VCE(sat) = 2.1 V (typ.) @ IC = 25 A
Very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
5 μs minimum short circuit withstand time at TJ = 150 °C
STGWA25H120DF2 Applications
Automotive
Enterprise systems
Communications equipment
