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STGB7NB60HDT4

STGB7NB60HDT4

STGB7NB60HDT4

STMicroelectronics

STGB7NB60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB7NB60HDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation80W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating7A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB7
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation80W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time48ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 14A
Reverse Recovery Time 100ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.8V
Max Breakdown Voltage 600V
Turn On Time63 ns
Test Condition 480V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 7A
Turn Off Time-Nom (toff) 220 ns
Gate Charge42nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 15ns/75ns
Switching Energy 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:4218 items

Pricing & Ordering

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STGB7NB60HDT4 Product Details

STGB7NB60HDT4 Description


STMicroelectronics has created an upgraded family of IGBTs, the PowerMESH IGBTs, with exceptional performance using the most recent high voltage technology based on a proprietary strip layout. For high frequency applications (120kHz), the suffix "H" designates a family tuned to achieve very low switching times.



STGB7NB60HDT4 Features


  • HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

  • LOW ON-VOLTAGE DROP (Vcesat)

  • LOW GATE CHARGE

  • HIGH CURRENT CAPABILITY

  • VERY HIGH FREQUENCY OPERATION

  • OFF LOSSES INCLUDE TAIL CURRENT

  • CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE

  • SURFACE-MOUNTING D2 PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



STGB7NB60HDT4 Applications


  • HIGH FREQUENCY MOTOR CONTROLS

  • SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


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