IRG4BC30WSTRR Description
GATE BIPOLAR TRANSISTOR WITH INSULATION
IRG4BC30WSTRR Features
?Fast (1–5 kHz in hard switching, >20 kHz in resonant mode), designed for medium operating frequencies.
?Compared to Generation 3, the Generation 4 IGBT design offers tighter parameter distribution and greater efficiency.
?TO-220AB packaging, which is industry standard
?Lead-Free
IRG4BC30WSTRR Applications
Switching applications
