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IRGBC40S

IRGBC40S

IRGBC40S

Infineon Technologies

IRGBC40S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGBC40S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 1996
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 160W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 50A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 31A
RoHS StatusNon-RoHS Compliant
In-Stock:2141 items

IRGBC40S Product Details

IRGBC40S Description


IRGBC40S is a type of insulated gate bipolar transistor provided by Infineon Technologies for line frequency operation. Compared with other bipolar transistors, IRGBC40S features higher usable current densities and simpler gate-drive requirements of the familiar power MOSFET. It is primarily designed for high-voltage, high-current applications.



IRGBC40S Features


  • Higher usable current densities

  • Simpler gate-drive requirements

  • Switching-loss rating includes all "tail" losses

  • Available in the TO-220AB package



IRGBC40S Applications


  • High-voltage, high-current applications


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