STGB35N35LZT4 Description
This application-specific IGBT utilizes the most advanced PowerMESH? technology. The built-in Zener diodes between the gate collector and gate emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in the automotive ignition system.
STGB35N35LZT4 Features
Designed for automotive applications and
AEC-Q101 qualified
Low threshold voltage
Low 0n-voltage drop
The high-voltage clamping feature
Logic level gate charge
ESD gate emitter protection
Gate and gate-emitter integrated resistors
STGB35N35LZT4 Applications
Automotive ignition
