NGD8201NT4G Description
For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.
NGD8201NT4G Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are Pb?Free Devices
NGD8201NT4G Applications
