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GA35XCP12-247

GA35XCP12-247

GA35XCP12-247

GeneSiC Semiconductor

IGBT Transistors 1200V 35A SIC IGBT CoPak

SOT-23

GA35XCP12-247 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Reverse Recovery Time 36 ns
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage3V
Test Condition 800V, 35A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 35A
IGBT Type PT
Gate Charge50nC
Current - Collector Pulsed (Icm) 35A
Switching Energy 2.66mJ (on), 4.35mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS StatusRoHS Compliant
In-Stock:3332 items

About GA35XCP12-247

The GA35XCP12-247 from GeneSiC Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT Transistors 1200V 35A SIC IGBT CoPak.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GA35XCP12-247, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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