IRG4BC30KDSTRRP Description
IRG4BC30KDSTRRP is an N-channel 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. HEXFREDTM diodes are optimized for performance with IGBTs, which minimized recovery characteristics and reduce noise, EMI, and switching losses. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30KDSTRRP is in the D2 Pak package with 100W power dissipation.
IRG4BC30KDSTRRP Features
High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V
Combines low conduction losses with a high switching speed
tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
IRG4BC30KDSTRRP Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise machine
Personal electronics
Home theater & entertainment
