HGTG12N60C3D

Description

The HGTG12N60C3D is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. The device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly. The TA49123 development type IGBT was used. The TA49061 development type diode is utilized in anti-parallel with the IGBT.

The IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses.

Previously known as Developmental Type TA49117.

Features

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• 24A, 600V at TC = 25°C

• Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150°C

Applications

• Power Management

• AC and DC motor drives offer speed control

• Chopper and inverters

• Solar inverters

• UPS (Uninterruptible Power Supply) system