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IRG4BC20SPBF

IRG4BC20SPBF

IRG4BC20SPBF

Infineon Technologies

IRG4BC20SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC20SPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation60W
Terminal Position SINGLE
Current Rating19A
Number of Elements 1
Element ConfigurationDual
Power Dissipation60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time27 ns
Transistor Application POWER CONTROL
Rise Time9.7ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 540 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 19A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.4V
Turn On Time38 ns
Test Condition 480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 10A
Turn Off Time-Nom (toff) 1540 ns
Gate Charge27nC
Current - Collector Pulsed (Icm) 38A
Td (on/off) @ 25°C 27ns/540ns
Switching Energy 120μJ (on), 2.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3496 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.673132$0.673132
10$0.635030$6.3503
100$0.599084$59.9084
500$0.565174$282.587
1000$0.533183$533.183

IRG4BC20SPBF Product Details

IRG4BC20SPBF Description


The IRG4BC20SPBF is an IGBT 600 V 19 A 60 W Through Hole TO-220AB. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.



IRG4BC20SPBF Features


  • Industry standard TO-220AB package

  • Lead-Free

  • Standard: optimized for minimum saturation voltage and low operating frequencies (<1kHz)

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

  • Generation 4 IGBTs offer highest efficiency available

  • IGBTs optimized for specified application conditions



IRG4BC20SPBF Applications


  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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