IRG7CH73K10EF Description
IRG7CH73K10EF is a type of insulated gate bipolar transistor that is designed based on low VCE (ON) trench IGBT technology. Due to low VCE (ON) and low switching losses, it is ideally suitable for a wide range of switching frequencies. Increased reliability can be ensured based on rugged switching performance and higher power capability. Moreover, the IRG7CH73K10EF IGBT is able to deliver excellent current sharing in parallel operation and tight parameter distribution.
IRG7CH73K10EF Features
Tight parameter distribution
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Positive VCE (ON) temperature coefficient
IRG7CH73K10EF Applications
Medium power drives
UPS
HEV inverter
Welding
Induction heating
