IRGC4067EFX7SA1 Description
IRGC4067EFX7SA1 is a 600v IGBT Die in Wafer Form. The Infineon IRGC4067EFX7SA1 provides high efficiency in a wide range of applications, and rugged transient performance for increased reliability. The IRGC4067EFX7SA1 is suitable for a wide range of switching frequencies due to low VCE(ON) and low switching losses. The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.
IRGC4067EFX7SA1 Features
100% Tested at Probe
Available in Chip Pack. Unsawn wafer, Sawn on Film
Low VCE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
Positive VCE (on) Temperature Coefficient
Tighter Distribution of Parameters
IRGC4067EFX7SA1 Applications
Consumer electronics
Industrial technology
The energy sector
Aerospace electronic devices
Transportation