SIGC08T60EX7SA1 Description
This IGBT device was developed using a state-of-the-art, unique trench gate and field stop structure. It is a brand-new "HB" series IGBT, which denotes the most effective trade-off between conduction and switching losses for any frequency converter. Additionally, a small positive VCE(sat) temperature coefficient and a very narrow parameter distribution result in safer paralleling operation.
SIGC08T60EX7SA1 Features
often utilized in applications for LDO (Linear), DDR
adopts an interface IC for the BUS TERMINATOR SUPPORT CIRCUIT
SIGC08T60EX7SA1 Applications
Switching applications
