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IRG7CH35UEF

IRG7CH35UEF

IRG7CH35UEF

Infineon Technologies

IRG7CH35UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7CH35UEF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~175°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Collector Emitter Voltage (VCEO) 1.6V
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 5A
Gate Charge85nC
Td (on/off) @ 25°C 30ns/160ns
RoHS StatusRoHS Compliant
In-Stock:1526 items

IRG7CH35UEF Product Details

IRG7CH35UEF Description

A bipolar transistor is a semiconductor device commonly used for amplification. The device can amplify analog or digital signals. It can also switch DC or function as an oscillator. Physically, a bipolar transistor amplifies current, but it can be connected in circuits designed to amplify voltage or power.

IRG7CH35UEF Applications


· Medium Power Drives

· UPS

· HEV Inverter

· Welding

· Induction Heating

IRG7CH35UEF Features


Low VCEIONand switchingLosses

Square RBSOA and Maximum Junction Temperature175°℃

Positive VCE oNTemperature Coefficient


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