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IRF3710ZGPBF

IRF3710ZGPBF

IRF3710ZGPBF

Infineon Technologies

MOSFET N-CH 100V 59A TO-220AB

SOT-23

IRF3710ZGPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2011
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 160W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:1118 items

About IRF3710ZGPBF

The IRF3710ZGPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 59A TO-220AB.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF3710ZGPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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