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IGB30N60H3ATMA1

  • IGB30N60H3ATMA1 - IGB30N60H3ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IGB30N60H3ATMA1 - IGB30N60H3ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IGB30N60H3ATMA1

IGB30N60H3ATMA1

Infineon Technologies

IGB30N60H3ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGB30N60H3ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
Series TrenchStop®
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number GB30N60
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 187W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Turn On Time40 ns
Test Condition 400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 262 ns
IGBT Type Trench Field Stop
Gate Charge165nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 18ns/207ns
Switching Energy 1.17mJ
RoHS StatusROHS3 Compliant
In-Stock:2937 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.848712$3.848712
10$3.630860$36.3086
100$3.425340$342.534
500$3.231452$1615.726
1000$3.048540$3048.54

IGB30N60H3ATMA1 Product Details

IGB30N60H3ATMA1 Description


The IGB30N60H3ATMA1 is a Highspeed IGBT in Trench and Fieldstop technology.



IGB30N60H3ATMA1 Features


  • TRENCHSTOPTM technology offering:

    -very low turn-off energy

    -low VCEsat

    -low EMI

    -maximum junction temperature 175°C

    -qualified according to JEDEC for target applications

    -Pb-free lead plating,halogen-free mould compound, RoHS compliant



IGB30N60H3ATMA1 Applications


  • uninterruptible power supplies

  • welding converters

  • converters with the high switching frequency


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