IKW75N65EH5XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IKW75N65EH5XKSA1 Features
High speed H5 technology offering
·Best-in-Class efficiency in hard switching and resonant topologies
·Plug and play replacement of previous generation IGBTs·650V breakdown voltage·Low gate charge QG
·GBT copacked with full-rated RAPID 1 fast and soft antiparallel diode
·Maximum junction temperature 175°℃
·Qualified according to JEDEC for target applications·Pb-free lead platingRoHS compliant
·Complete product spectrum and PSpice Models
IKW75N65EH5XKSA1 Applications
·Uninterruptible power supplies Solar converters·Welding converters
·Mid to high range switching frequency converters
