Name: STGB10H60DF
Brand: STMicroelectronics
SKU: STGB10H60DF
Price: 2.00000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	2.000002g
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	115W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB10
Element Configuration	Single
Input Type	Standard
Power - Max	115W
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Reverse Recovery Time	107 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Max Breakdown Voltage	600V
Test Condition	400V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 10A
IGBT Type	Trench Field Stop
Gate Charge	57nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	19.5ns/103ns
Switching Energy	83μJ (on), 140μJ (off)
Height	4.6mm
Length	10.4mm
Width	9.35mm
RoHS Status	ROHS3 Compliant

STGB10H60DF Product Details

STGB10H60DF Description

If your circuit has strong currents flowing through it, this STMicroelectronics STGB10H60DF IGBT transistor is ideal. It has a collector-emitter voltage of 600 V at its highest. It can dissipate up to 115000 mW of power. During shipment, this component will be encased in tape and reel packing to ensure safe delivery and enable quick mounting after delivery. It's only made in one configuration. This IGBT transistor can operate at temperatures as low as -55°C and as high as 175°C. Field stop|trench technology was used to create this device.