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FGH40N60SMD-F085

FGH40N60SMD-F085

FGH40N60SMD-F085

ON Semiconductor

FGH40N60SMD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGH40N60SMD-F085 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation349W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 349W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 47 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Turn On Time43.7 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 172.5 ns
IGBT Type Field Stop
Gate Charge180nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 18ns/110ns
Switching Energy 920μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 81ns
RoHS StatusROHS3 Compliant
In-Stock:1042 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.67000$5.67
10$5.10400$51.04
450$4.00747$1803.3615
900$3.61413$3252.717

FGH40N60SMD-F085 Product Details

FGH40N60SMD-F085 Description


FGH40N60SMD-F085 is a 600v Field Stop IGBT. Using Novel Field Stop IGBT Technology, ON Semiconductor's new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, inverters, and other applications where low conduction and switching losses are essential. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor FGH40N60SMD-F085 is in the TO?247?3LD package with 349W power dissipation.




FGH40N60SMD-F085 Features


Maximum Junction Temperature: Tj= 175°C

Positive Temperature Co-efficient for Easy Parallel Operating

High Current Capability

Low Saturation Voltage: VCE(sat)= 1.9 V(Typ.)@Ic= 40 A

High Input Impedance

Tightened Parameter Distribution

AEC Qualified and PPAP Capable IGBT: AEC -Q101

This Device is Pb- Free and RoHS Compliant



FGH40N60SMD-F085 Applications


Automotive Chargers

Converters

High Voltage Auxiliaries

Inverters

SMPS

PFC

UPS


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