IKW20N60H3FKSA1 Description
A High-Speed IGBT in Trench and Field-Stop Technology with a Soft, Fast Recovery Anti-Parallel Diode is the IKW20N60H3FKSA1. The fast device is used to make the active components smaller (25 to 70kHz). The switching and conduction losses are best balanced by the high speed 3 families. This family's distinguishing trait is its minimal turn-OFF losses, MOSFET-like turn-OFF switching behavior.
IKW20N60H3FKSA1 Features
Halogen-free
Green product
Short-circuit capability
Excellent performance
Very good EMI behaviour
Low switching and conduction losses
Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Best-in-class IGBT efficiency and EMI behaviour
Small gate resistor for reduced delay time and voltage overshoot
Packaged with and without freewheeling diode for increased design freedom
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
IKW20N60H3FKSA1 Applications
Power Management
Alternative Energy
