IKW30N65NL5XKSA1 Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IKW30N65NL5XKSA1 Features
LowVCE(sat)L5technologyoffering
?Verylowcollector-emittersaturationvoltageVCEsat
?Best-in-Classtradeoffbetweenconductionandswitchinglosses
?650Vbreakdownvoltage
?LowgatechargeQG
?Maximumjunctiontemperature175°C
?QualifiedaccordingtoJEDECfortargetapplications
?Pb-freeleadplating
?RoHScompliant
?CompleteproductspectrumandPSpicemodels:
IKW30N65NL5XKSA1 Applications
?Uninterruptiblepowersupplies
?Solarphotovoltaicinverters
?Weldingmachines
