IKW25N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKW25N120H3FKSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Input Type
Standard
Power - Max
326W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
290ns
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
50A
Turn On Time
61 ns
Test Condition
600V, 25A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 25A
Turn Off Time-Nom (toff)
397 ns
IGBT Type
Trench Field Stop
Gate Charge
115nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
27ns/277ns
Switching Energy
2.65mJ
RoHS Status
ROHS3 Compliant
In-Stock:1219 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.805420
$11.80542
10
$11.137189
$111.37189
100
$10.506782
$1050.6782
500
$9.912058
$4956.029
1000
$9.350998
$9350.998
IKW25N120H3FKSA1 Product Details
IKW25N120H3FKSA1 Description
IKW25N120H3FKSA1 is a 1200 V IGBT equipped with an anti-parallel diode that is part of the TO-247 package. It has a diode that is free-wheeling within the TO-247 package that provides the ideal combination of switching and conduction losses. The main characteristic of this family is a MOSFET-like switch-off that results in low turn-off losses.
IKW25N120H3FKSA1 Features
Low switching and conduction losses Very good EMI behavior Can be used with a small gate resistor for reduced delay time and voltage overshoot High current density Best-in-class 1200 V IGBT efficiency and EMI behavior
IKW25N120H3FKSA1 Applications
Industrial Heating and Welding Solutions for solar energy systems Uninterruptible power supply
Related Products
Similar Transistors - IGBTs - Single from Infineon Technologies and other manufacturers
