STGWT80V60F Description
This device is an IGBT developed using anadvanced proprietary trench gate field stopstructure. The device is part of the V series ofIGBTs, which represent an optimum compromisebetween conduction and switching losses tomaximize the efficiency of very high frequencyconverters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameterdistribution result in safer paralleling operation.
STGWT80V60F Features
? Maximum junction temperature: TJ = 175 °C
? Tail-less switching off
? VCE(sat) = 1.85 V (typ.) @ IC = 80 A
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
STGWT80V60F Applications
? Photovoltaic inverters
? Uninterruptible power supply
? Welding
? Power factor correction
? Very high frequency converters
