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STGB10NB37LZT4

STGB10NB37LZT4

STGB10NB37LZT4

STMicroelectronics

STGB10NB37LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB10NB37LZT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional FeatureVOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation125W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Current Rating20A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB10
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation125W
Case Connection COLLECTOR
Input Type Standard
Transistor Application AUTOMOTIVE IGNITION
Rise Time340ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 440V
Max Collector Current 20A
Collector Emitter Breakdown Voltage440V
Max Breakdown Voltage 440V
Turn On Time860 ns
Test Condition 328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff) 17800 ns
Gate Charge28nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 1.3μs/8μs
Switching Energy 2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max 2.4V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2096 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.515160$0.51516
10$0.486000$4.86
100$0.458491$45.8491
500$0.432538$216.269
1000$0.408055$408.055

STGB10NB37LZT4 Product Details

STGB10NB37LZT4 Description



STGB10NB37LZT4 IGBT employs the most advanced technology that results in a superior tradeoff between switching speed and low on-state behavior. The collector-gate built into the Zener has a precise active clamping, while it emits the gate. Zener offers ESD protection.


STGB10NB37LZT4 Features


Low threshold voltage
Low on-voltage drop
Low gate charge
High current capability
High voltage clamping feature


STGB10NB37LZT4 Applications


Automotive ignition

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