STGWA20M65DF2 Description
The STGWA20M65DF2 is a Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT. This IGBT was created employing a cutting-edge, exclusive trench gate fieldstop structure. The device is a member of the M series of IGBTs, which represent the performance and efficiency of an inverter system in which low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operations.
STGWA20M65DF2 Features
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
High short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 20 A
Tight parameters distribution
STGWA20M65DF2 Applications
