STGWA30H65DFB Description
This device is an IGBT developed using anadvanced proprietary trench gate field-stopstructure. The device is part of the new HB seriesof IGBTs, which represents an optimumcompromise between conduction and switchingloss to maximize the efficiency of any frequencconverter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tightparameter distribution result in safer parallelingoperation.
STGWA30H65DFB Features
· Maximum junction temperature: TJ = 175 °C
· High speed switching series
· Minimized tail current
· Low saturation voltage: VCE(sat) = 1.55 V
(typ.) @ IC = 30 A
· Tight parameter distribution
· Safe paralleling
· Low thermal resistance
· Very fast soft recovery antiparallel diode
STGWA30H65DFB Applications
· Photovoltaic inverters
· High frequency converters
