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IKD04N60RATMA1

  • IKD04N60RATMA1 - IKD04N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IKD04N60RATMA1 - IKD04N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IKD04N60RATMA1

IKD04N60RATMA1

Infineon Technologies

IKD04N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKD04N60RATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-40°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
Series TrenchStop™
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation75W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 75W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 8A
Reverse Recovery Time 43 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Max Breakdown Voltage 600V
Turn On Time20 ns
Test Condition 400V, 4A, 43 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Turn Off Time-Nom (toff) 342 ns
IGBT Type Trench Field Stop
Gate Charge27nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 14ns/146ns
Switching Energy 90μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:13714 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.635067$0.635067
10$0.599120$5.9912
100$0.565208$56.5208
500$0.533215$266.6075
1000$0.503033$503.033

IKD04N60RATMA1 Product Details

IKD04N60RATMA1 Description


IGBT in packages with integrated diode offers benefit of space saving



IKD04N60RATMA1 Features


  • optimized for minimal conduction losses using VcEaat and Vf

  • Low EMI levels are produced through smooth switching performance.

  • Extremely narrow parameter range

  • Operating range of 1 to 20kHz

  • 175°C is the maximum junction temperature

  • 5 ps of short-circuit capacity



IKD04N60RATMA1 Applications


Drives for consumer motors


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