Name: STGYA120M65DF2
Brand: STMicroelectronics
SKU: STGYA120M65DF2
Price: 15.67000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mounting Type	Through Hole
Package / Case	TO-247-3 Exposed Pad
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	M
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	STGYA120
Input Type	Standard
Power - Max	625W
Reverse Recovery Time	202ns
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	160A
Test Condition	400V, 120A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 120A
IGBT Type	NPT, Trench Field Stop
Gate Charge	420nC
Current - Collector Pulsed (Icm)	360A
Td (on/off) @ 25°C	66ns/185ns
Switching Energy	1.8mJ (on), 4.41mJ (off)
RoHS Status	ROHS3 Compliant

STGYA120M65DF2 Product Details

STGYA120M65DF2 Description

The STGYA120M65DF2 is an IGBT that was created with a patented trench gate field-stop structure. The STGYA120M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.

STGYA120M65DF2 Features

6 seconds of short-circuit withstand

@ IC = 120 A, VCE(sat) = 1.65 V (typ.)

a narrow parameter distribution

Paralleling is now safer.

VCE(sat) temperature coefficient is positive.

Thermal resistance is low.

Antiparallel diode with a soft and quick recovery time

TJ = 175 °C maximum junction temperature

STGYA120M65DF2 Applications

Motor control

UPS