IKW30N60DTPXKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IKW30N60DTPXKSA1 Features
TRENCHSTOPtechnology offering*very low VcEsat
low turn-off losses short tail current low EMI
Very soft.fast recoveryanti-parallel diode maximumjunction temperature 175°℃
qualified according to JEDEC for target applications Pb-free lead plating:RoHS compliant
IKW30N60DTPXKSA1 Applications
·drives
solar inverters
*uninterruptible power supplies
*converters with medium switching frequency
