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IXXH30N60B3

IXXH30N60B3

IXXH30N60B3

IXYS

IGBT 600V TO247

SOT-23

IXXH30N60B3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Series GenX3™, XPT™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation270W
Input Type Standard
Power - Max 270W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Max Collector Current 60A
Collector Emitter Breakdown Voltage600V
Test Condition 400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 24A
IGBT Type PT
Gate Charge39nC
Current - Collector Pulsed (Icm) 115A
Td (on/off) @ 25°C 23ns/97ns
Switching Energy 550μJ (on), 500μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
RoHS StatusROHS3 Compliant
In-Stock:1337 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$4.67767$140.3301

About IXXH30N60B3

The IXXH30N60B3 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 600V TO247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXXH30N60B3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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