IRG4PH40UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PH40UDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
ULTRA FAST SOFT RECOVERY
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
160W
Current Rating
41A
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
46 ns
Transistor Application
POWER CONTROL
Rise Time
59ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
150 ns
Collector Emitter Voltage (VCEO)
3.1V
Max Collector Current
41A
Reverse Recovery Time
63 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.43V
Turn On Time
74 ns
Test Condition
800V, 21A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 21A
Turn Off Time-Nom (toff)
750 ns
Gate Charge
86nC
Current - Collector Pulsed (Icm)
82A
Td (on/off) @ 25°C
46ns/97ns
Switching Energy
1.8mJ (on), 1.93mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:2879 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.61000
$6.61
10
$5.93800
$59.38
100
$4.86550
$486.55
500
$4.14190
$2070.95
IRG4PH40UDPBF Product Details
IRG4PH40UDPBF Description
The IRG4PH40UDPBF is a 1200V Ultrafast 5 to 40kHz co-pack IGBT with a soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes are optimized for performance and used in bridge configurations. The latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. The IRG4PH40UDPBF is offered in the TO-247-3 package. It is specified for operation from –55°C to +150°C.
IRG4PH40UDPBF Features
UltraFast Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
The new IGBT design provides tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-247AC package
Lead-Free
IRG4PH40UDPBF Applications
Solar energy
Wind energy
Hydro energy
Tidal energy
Geothermal energy
Biomass energy
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