IHD10N60RA Description
IHD10N60RA transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IHD10N60RA MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IHD10N60RA has the common source configuration.
IHD10N60RA Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IHD10N60RA Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
