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IRGP4790DPBF

IRGP4790DPBF

IRGP4790DPBF

Infineon Technologies

IRGP4790DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4790DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2014
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation455W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element ConfigurationSingle
Input Type Standard
Power - Max 455W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 140A
Reverse Recovery Time 170 ns
Collector Emitter Breakdown Voltage650V
Collector Emitter Saturation Voltage1.7V
Test Condition 400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Gate Charge210nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 2.5mJ (on), 2.2mJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:3579 items

IRGP4790DPBF Product Details

IRGP4790DPBF Description


The Infineon Technologies IRGP4790DPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.



IRGP4790DPBF Features


  • Low VCE(ON) and Switching Losses

  • High Efficiency in a Wide Range of Applications

  • 5.5μs Short Circuit SOA

  • Square RBSOA

  • Maximum Junction Temperature 175°C

  • Increased Reliability

  • Positive VCE (ON) Temperature Coefficient

  • Excellent Current Sharing in Parallel Operation

  • Rugged Transient Performance

  • Lead-Free, RoHs compliant

  • Environmentally friendly



IRGP4790DPBF Applications


  • Industrial Motor Drive

  • UPS

  • Solar Inverters

  • Welding


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