IGW30N65L5XKSA1 Description
IGW30N65L5XKSA1 is a 650v Low VCE(sat) IGBT in TRENCHSTOPTM5 technology. The Infineon IGW30N65L5XKSA1 can be applied in Uninterruptible power supplies, Solar photovoltaic inverters, and Welding machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW30N65L5XKSA1 is in the PG-TO247-3 package with 227W power dissipation.
IGW30N65L5XKSA1 Features
Very low collector-emitter saturation voltage VCEsat
The best-in-Class tradeoff between conduction and switching losses
650V breakdown voltage
Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating
RoHS compliant
IGW30N65L5XKSA1 Applications
Uninterruptible power supplies
Solar photovoltaic inverters
Welding machines
Automotive
Infotainment & cluster
Communications equipment
