FD300R12KS4B5HOSA1 Description
The FD300R12KS4B5HOSA1 is a 62 mm 1200 V, 300 A single switch IGBT module with IGBT2 Fast for high-frequency switching and Emitter Controlled High-Efficiency diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
FD300R12KS4B5HOSA1 Features
Optimized switching characteristic like softness and reduced switching losses
Existing packages with higher current capability
RoHS compliant
Superior solution for frequency controlled inverter drives
UL/CSA Certification with UL1557 E83336
Operating temperature up to 150 °C
Flexibility
Optimal electrical performance
Highest reliability
FD300R12KS4B5HOSA1 Applications
