BSZ086P03NS3EGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSZ086P03NS3EGATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
ESD PROTECTED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
S-PDSO-N5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
2.1W Ta 69W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
69W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
3.1V @ 105μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
4785pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.5A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs
57.5nC @ 10V
Rise Time
46ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±25V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
13.5A
Threshold Voltage
-2.5V
Gate to Source Voltage (Vgs)
25V
Max Dual Supply Voltage
-30V
Drain to Source Breakdown Voltage
-30V
Height
1.1mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:7348 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.345930
$4.34593
10
$4.099934
$40.99934
100
$3.867862
$386.7862
500
$3.648927
$1824.4635
1000
$3.442384
$3442.384
BSZ086P03NS3EGATMA1 Product Details
BSZ086P03NS3EGATMA1 Description
P-channel power MOSFETs are part of Infineon's extremely unique OptiMOSTM family. In essential parameters for power system design, such as on-state resistance and figure of merit characteristics, BSZ086P03NS3EGATMA1 constantly meets the highest quality and performance expectations.
BSZ086P03NS3EGATMA1 Features
single P-Channel in S3O8
Qualified according to JEDEC1) for target applications
150 °C operating temperature
V GS=25 V, especially suited for notebook applications
Pb-free; RoHS compliant
ESD protected
Halogen-free according to IEC61249-2-21
Enhancement mode
Normal level, logic level, or super logic level
Avalanche rated
Pb-free lead plating; RoHS compliant
BSZ086P03NS3EGATMA1 Applications
battery management
load switching
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
Related Products
Similar Transistors - FETs, MOSFETs - Single from Infineon Technologies and other manufacturers
