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FQB9N25CTM

FQB9N25CTM

FQB9N25CTM

ON Semiconductor

MOSFET N-CH 250V 8.8A D2PAK

SOT-23

FQB9N25CTM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 74W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:12014 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.591834$5.591834
10$5.275315$52.75315
100$4.976713$497.6713
500$4.695012$2347.506
1000$4.429257$4429.257

About FQB9N25CTM

The FQB9N25CTM from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 250V 8.8A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQB9N25CTM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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