Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STW30N80K5

STW30N80K5

STW30N80K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 180m Ω @ 12A, 10V ±30V 1530pF @ 100V 43nC @ 10V 800V TO-247-3

SOT-23

STW30N80K5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series MDmesh™ K5
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW30N
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1530pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:1016 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.88000$7.88
10$7.08000$70.8
100$5.88750$588.75
600$4.85452$2912.712

STW30N80K5 Product Details

STW30N80K5 Description


STW30N80K5 is a type of N-channel power MOSFET provided by ON Semiconductor based on MDmesh? K5 technology. Based on its innovative vertical structure, it is able to provide low on-resistance and low gate charge for applications where superior power density and high efficiency are required.



STW30N80K5 Features


  • Low RDS (on)

  • Low on-resistance

  • Low input capacitance

  • Improved vertical structure

  • Extremely low gate charge

  • Available in the TO-247 package



STW30N80K5 Applications


  • Switching applications


Get Subscriber

Enter Your Email Address, Get the Latest News