Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SPB17N80C3ATMA1

SPB17N80C3ATMA1

SPB17N80C3ATMA1

Infineon Technologies

SPB17N80C3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPB17N80C3ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 227W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 17A
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 51A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 670 mJ
RoHS StatusROHS3 Compliant
In-Stock:1075 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.178779$4.178779
10$3.942244$39.42244
100$3.719099$371.9099
500$3.508583$1754.2915
1000$3.309984$3309.984

SPB17N80C3ATMA1 Product Details

SPB17N80C3ATMA1 Description

The SPB17N80C3 is a CoolMOSTM N-channel Power MOSFET with an ultra-low gate current that operates at 800V. It's made for switching and high DC bulk voltage applications.


SPB17N80C3ATMA1 Features

  • new revolutionary high voltage technology

  • Extreme dv/dt rated

  • High peak current capability

  • Qualified according to JEDEC1) for target applications

  • Pb-free lead plating; RoHS compliant

  • Ultra-low gate charge

  • Ultra-low effective capacitances

  • High efficiency and power density

  • Outstanding cost/performance

  • High reliability

  • Ease-of-use


SPB17N80C3ATMA1 Applications

  • Industrial application with high DC bulk voltage

  • Switching Application (i.e. active clamp forward)

  • Consumer

  • PC power

  • Adapter

  • Lighting

  • Solar


Get Subscriber

Enter Your Email Address, Get the Latest News