Name: FDFME3N311ZT
Brand: ON Semiconductor
SKU: FDFME3N311ZT
Price: 0.23000 USD
Availability: InStock

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FDFME3N311ZT

Manufacturer part number:FDFME3N311ZT

Manufacturer:ON Semiconductor

Description:MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode

Case Package:SOT-23

Datasheet:FDFME3N311ZT Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFDFN Exposed Pad
Number of Pins	6
Weight	25.2mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Number of Elements	1
Power Dissipation-Max	1.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	299m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.8A Ta
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 4.5V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.299Ohm
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	1 V
Height	550μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

About FDFME3N311ZT

The FDFME3N311ZT from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDFME3N311ZT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.