BCX6825H6327XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 1A volts is possible.
BCX6825H6327XTSA1 Features
the DC current gain for this device is 160 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCX6825H6327XTSA1 Applications
There are a lot of Infineon Technologies BCX6825H6327XTSA1 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
