KSP06TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 4V for high efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
KSP06TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP06TA Applications
There are a lot of ON Semiconductor KSP06TA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
