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BC857W,115

BC857W,115

BC857W,115

Nexperia USA Inc.

BC857W,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC857W,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.21.00.95
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857
Pin Count3
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
VCEsat-Max 0.65 V
Collector-Base Capacitance-Max 5pF
RoHS StatusROHS3 Compliant
In-Stock:51894 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.060032$0.060032
500$0.044141$22.0705
1000$0.036784$36.784
2000$0.033747$67.494
5000$0.031539$157.695
10000$0.029339$293.39
15000$0.028374$425.61
50000$0.027900$1395

BC857W,115 Product Details

BC857W,115 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BC857W,115 Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

BC857W,115 Applications


There are a lot of Nexperia USA Inc. BC857W,115 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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