BC857W,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 125 @ 2mA 5V.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC857W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857W,115 Applications
There are a lot of Nexperia USA Inc. BC857W,115 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface